Doping-Less Tunnel Field Effect Transistor: Design and Investigation
نویسندگان
چکیده
منابع مشابه
Design and Simulation of a Dual Material Double Gate Tunnel Field Effect Transistor Using Tcad
High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2013
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2013.2276888